- 您现在的位置：买卖IC网 > Sheet目录368 > W25Q80BVSNIG (Winbond Electronics)IC SPI FLASH 8MBIT 8SOIC
W25Q80BV
6.2.37 Erase Security Registers (44h)
The W25Q80BV offers three 256-byte Security Registers which can be erased and programmed
individually. These registers may be used by the system manufacturers to store security and other
important information separately from the main memory array.
The Erase Security Register instruction is similar to the Sector Erase instruction. A Write Enable
instruction must be executed before the device will accept the Erase Security Register Instruction (Status
Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the
instruction code “ 44 h” followed by a 24-bit address (A23-A0) to erase one of the three security registers.
ADDRESS
Security Register #1
Security Register #2
Security Register #3
A23-16
00h
00h
00h
A15-12
0001
0010
0011
A11-8
0000
0000
0000
A7-0
Don’t Care
Don’t Care
Don’t Care
The Erase Security Register instruction sequence is shown in figure 35. The /CS pin must be driven high
after the eighth bit of the last byte has been latched. If this is not done the instruction will not be executed.
After /CS is driven high, the self-timed Erase Security Register operation will commence for a time
duration of t SE (See AC Characteristics). While the Erase Security Register cycle is in progress, the Read
Status Register instruction may still be accessed for checking the status of the BUSY bit. The BUSY bit is
a 1 during the erase cycle and becomes a 0 when the cycle is finished and the device is ready to accept
other instructions again. After the Erase Security Register cycle has finished the Write Enable Latch
(WEL) bit in the Status Register is cleared to 0. The Security Register Lock Bits LB[3:1] in the Status
Register-2 can be used to OTP protect the security registers. Once a lock bit is set to 1, the
corresponding security register will be permanently locked, Erase Security Register instruction to that
register will be ignored (See 7.1.9 for detail descriptions).
/CS
Mode 3
0
1
2
3
4
5
6
7
8
9
29
30
31
Mode 3
CLK
Mode 0
Instruction (44h)
24-Bit Address
Mode 0
DI
(IO 0 )
23
*
22
2
1
0
DO
(IO 1 )
* = MSB
High Impedance
Figure 35. Erase Security Registers Instruction Sequence
- 56 -
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
W25Q80BWSSIG
IC FLASH SPI 8MBIT 8SOIC
W25X40BVZPIG
IC SPI FLASH 4MBIT 8WSON
W25X64VZEIG
IC FLASH 64MBIT 75MHZ 8WSON
W25X80AVDAIZ
IC FLASH 16MBIT 100MHZ 8DIP
W29GL032CB7A
IC FLASH 32MBIT 70NS 48TFBGA
W29GL064CB7S
IC FLASH 64MBIT 70NS 48TSOP
W29GL128CL9T
IC FLASH 128MBIT 90NS 56TSOP
W631GG6KB-15
IC DDR3 SDRAM 1GBIT 96WBGA
相关代理商/技术参数
W25Q80BVSNIG TR
制造商:Winbond Electronics Corp 功能描述: 制造商:Winbond Electronics Corp 功能描述:IC FLASH 8MBIT 104MHZ 8SOIC
W25Q80BVSNIP
制造商:WINBOND 制造商全称:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q80BVSSAG
制造商:WINBOND 制造商全称:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q80BVSSAP
制造商:WINBOND 制造商全称:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q80BVSSIG
功能描述:IC FLASH 8MBIT 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G（256M x 16） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6
W25Q80BVSSIG TR
制造商:Winbond Electronics Corp 功能描述:SPIFLASH, 8M-BIT, 4KB UNIFORM 制造商:Winbond Electronics Corp 功能描述:IC FLASH 8MBIT 104MHZ 8SOIC
W25Q80BVSSIG/REELS
制造商:Winbond Electronics Corp 功能描述:
W25Q80BVSSIG-T
制造商:Winbond Electronics 功能描述:8MB SPI FLASH